NEXPERIA
双路场效应管, MOSFET, 双N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
NEXPERIA
晶体管, MOSFET, N沟道, 210 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 10.2A, SOIC
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0055 ohm, 10 V, 1.5 V
DIODES INC.
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0045 ohm, -10 V, -3 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.9 A, 800 V, 3.7 ohm, 10 V, 4.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 10.5 A, 700 V, 0.54 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 30 V, 0.048 ohm, 4.5 V, 800 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.14 ohm, -4.5 V, -1 V
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V