INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 通道, 40V, 100A, PQFN-8
INFINEON
晶体管, MOSFET, N沟道, 5 A, 30 V, 22 mohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 180 A, 25 V, 0.0012 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0018 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道+肖特基, 160 A, 25 V, 0.0014 ohm, 10 V, 1.8 V
INFINEON
场效应管, MOSFET, N沟道 通道, 25V, 30A, PQFN-8
VISHAY
晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.017 ohm, 4.5 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
DIODES INC.
晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
INFINEON
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.0047 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, 小信号, P沟道, -25 A, -30 V, 0.056 ohm, -5 V, -1.6 V
INFINEON
晶体管, MOSFET, P沟道, -39.6 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 0.012 ohm, 10 V, 4 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 3.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V