STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.17 ohm, 10 V, 5 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 300 V, 26 mohm, 10 V, 5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V
VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
INFINEON
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.04 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
MICROCHIP
晶体管, MOSFET, N沟道, 120 mA, 350 V, 17 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V