VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 4.4 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 500 V, 0.039 ohm, 10 V, 5 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
STMICROELECTRONICS
Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V