DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
MICROCHIP
晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
VISHAY
MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3
INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V