VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
VISHAY
场效应管, MOSFET, N沟道, 20V, 50A, SOIC
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V
DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V
VISHAY
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道 + 肖特基, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, P沟道, -39 A, -30 V, 0.0061 ohm, -10 V, -2.5 V