VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N
ROHM
晶体管, MOSFET, P沟道, -6 A, -45 V, 0.026 ohm, -10 V, -2.5 V
TOSHIBA
晶体管, MOSFET, N沟道, 70 A, 60 V, 5.8 mohm, 10 V, 4 V
ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.35 ohm, 10 V, 2.5 V
VISHAY
场效应管, MOSFET, N沟道, 150V, 3A, SOIC
INFINEON
场效应管, MOSFET, N沟道, 30V, 16A, PQFN
VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -1.03 A, -20 V, 0.5 ohm, -4.5 V, -1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 6.3 ohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -68 A, -75 V, 0.0065 ohm, -10 V
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
VISHAY
场效应管, MOSFET, N沟道
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V