INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
VISHAY
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 8.5A
VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
VISHAY
场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
VISHAY
晶体管, MOSFET, N沟道, 25 A, 400 V, 0.14 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 33 mohm, 4.5 V, 800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.1 ohm, 10 V, 4 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V