ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 600V
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 6.6A D-PAK
VISHAY
晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 4 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
VISHAY
晶体管, MOSFET, N沟道, 31 A, 500 V, 180 mohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
VISHAY
场效应管, MOSFET, N沟道
SEMELAB
晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, P沟道, 4.3 A, -200 V, 800 mohm, -10 V, -4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 80V, SOIC
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V