VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 500 V, 230 mohm, 10 V, 2 V
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -28 A, -30 V, 0.0052 ohm, -10 V, -1.8 V
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 27 A, 600 V, 220 mohm, 10 V, 5 V
DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.052 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
INFINEON
功率场效应管, MOSFET, N沟道, 12.5 A, 700 V, 0.3 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V