STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 5.4 A, 100 V, 39 mohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10 V, 5 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
VISHAY
MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6
INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道, 25W, D-PAK
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 500 V, 49 mohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 270 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
ROHM
双路场效应管, MOSFET, N和P沟道, 200 mA, 20 V, 0.7 ohm, 4 V, 1 V