VISHAY
场效应管, MOSFET, N沟道
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.95 ohm, 10 V, 3.75 V
MICROCHIP
晶体管, MOSFET, N沟道, 13 mA, 500 V, 850 ohm, 0 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 620 V, 2.5 ohm, 10 V, 3.75 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 40 V, 0.027 ohm, 10 V, 2.5 V
VISHAY
Transistor Polarity:P Channel
VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
VISHAY
单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
INFINEON
功率场效应管, MOSFET, N沟道, 18 A, 650 V, 0.11 ohm, 10 V, 3.5 V
TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3
VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236