VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 8230 μohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.102 ohm, -10 V, -2.7 V
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.162 ohm, 10 V, 2.5 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.005 ohm, 10 V, 1.83 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V
ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V