TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 200 V, 140 mohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 150 V, 0.0103 ohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.5 A, 400 V, 0.43 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.073 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 40 V, 0.0074 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0158 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 6.7 mohm, 10 V, 1 V
MICROCHIP
晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0029 ohm, 10 V, 2.7 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V