DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.1 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
INFINEON
晶体管, MOSFET, N沟道, 85 A, 55 V, 0.011 ohm, 10 V, 4 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.6 A, 20 V, 37 mohm, 4.5 V, 700 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.023 ohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.0009 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 240 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0012 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0043 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.014 ohm, 10 V, 4 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V