INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 68 A, 60 V, 0.0055 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.028 ohm, -4.5 V, -300 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0021 ohm, 10 V, 1.8 V
NEXPERIA
晶体管, MOSFET, N沟道, 87 A, 60 V, 0.00527 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0014 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 5.4 mohm, -10 V, -1.8 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.0081 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V