INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V