NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 107 A, 40 V, 0.0025 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.003 ohm, -10 V
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00103 ohm, 10 V, 1.73 V
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 24 A, 150 V, 95 mohm, 10 V, 5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V