INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 0.83 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0111 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.041 ohm, 10 V, 3.1 V
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.0095 ohm, 10 V, 3.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 295 mohm, -10 V, -4 V
MICROCHIP
晶体管, MOSFET, N沟道, 72 mA, 350 V, 35 ohm, 0 V
VISHAY
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.019 ohm, 10 V, 2 V