产品分类：MOSFET晶体管,规格：MSL MSL 1 -无限制,
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.7 A, 100 V, 120 mohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 14 A, -40 V, 0.036 ohm, 20 V, -1.6 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -160 mA, -60 V, 2.1 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 mA, 30 V, 2.9 ohm, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1.1 ohm, 10 V, 1.75 V
(EN)
