ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 500 V, 0.72 ohm, 13 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
NEXPERIA
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -600 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -3 A, -20 V, 0.031 ohm, -4.5 V, -650 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, Trench, AEC-Q101, N沟道, 30 A, 40 V, 0.0056 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.9 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V