VISHAY
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.313 ohm, 10 V, 4.5 V
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.295 ohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0105 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
VISHAY
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.45 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 46 A, 80 V, 0.0112 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
INFINEON
晶体管, MOSFET, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.064 ohm, -4.5 V, -1.3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V