产品分类：MOSFET晶体管,规格：MSL MSL 1 -无限制,
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6.9 A, -30 V, 22 mohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 40 V, 0.044 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.09 ohm, -4.5 V, -1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -300 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -12 V, 0.08 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)
