VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -830 mA, -20 V, 0.28 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 1 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
NEXPERIA
晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V