ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V
NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV