VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -12 A, -40 V, 0.0061 ohm, -10 V, -800 mV
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, 1.17 A, -15 V, 0.18 ohm, -10 V, -1.25 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 mA, 450 V, 3.7 ohm, 10 V, 3 V
ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.13 ohm, 4.5 V, 1 V
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 30 V, 240 mohm, 4.5 V, 1.5 V
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
DIODES INC.
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V