ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
ROHM
双路场效应管, MOSFET, N和P沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 150 V, 0.0045 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.16 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -20 V, 340 mohm, -4.5 V, -2 V