TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 30 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 0.047 ohm, -4.5 V, -400 mV
VISHAY
晶体管, MOSFET, P沟道, -18 A, -40 V, 0.021 ohm, -4.5 V, -3 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
DIODES INC.
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, -5 V, -800 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V
VISHAY
晶体管, MOSFET, N沟道, 25 A, 40 V, 0.00646 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.021 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 3.4 V
VISHAY
晶体管, MOSFET, N沟道, 29 A, 150 V, 0.0285 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 95 A, 100 V, 0.004 ohm, 10 V, 3.4 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0024 ohm, 10 V, 3.4 V
VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 24.2 A, 250 V, 0.052 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, N沟道, 140 mA, 20 V, 5 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V