ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, N和P沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
VISHAY
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0025 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
VISHAY
晶体管, MOSFET, P沟道, -110 A, -40 V, 0.0041 ohm, -10 V, -3 V