INFINEON
晶体管, MOSFET, N沟道, 192 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 45 A, 30 V, 0.0039 ohm, 4.5 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V