ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 2A, SuperSOT, 整卷
INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.016 ohm, -10 V, -3 V
VISHAY
场效应管, MOSFET, P沟道, -35V, 35A, 整卷
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14 A, -40 V, 36 mohm, -10 V, -1.6 V
VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.0072 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
INTERNATIONAL RECTIFIER
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -2 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.105 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -23 A, -100 V, 0.117 ohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V