INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, 6 A, -100 V, 600 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
VISHAY
晶体管, MOSFET, P沟道, -6.8 A, -100 V, 600 mohm, -10 V, -4 V
VISHAY
场效应管, P通道, MOSFET, -100V, 6.8A, D2-PAKT
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V
SEMELAB
晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 3.5A, TO-205AF
INFINEON
晶体管, MOSFET, N沟道, 3.5 A, 100 V, 600 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 4A, TO-205AF
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 5A, D-PAKS
VISHAY
场效应管, MOSFET, P沟道
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V