VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.004 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V
TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
ROHM
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 161A, D-PAK
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.01917 ohm, 10 V, 1.7 V
INFINEON
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00105 ohm, 10 V, 1.46 V