产品分类：场效应管MOSFET晶体管(600V以下),
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 125W, TO-262
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.5A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.0229 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40W, TO-220 FULLPAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 30V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 225 mohm, 10 V, 5 V
(EN)
