产品分类：场效应管MOSFET晶体管(600V以下),
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 30 V, 0.8 ohm, 4.5 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 90 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.036 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 0.086Ω, 2.7A, SUPERSOT-6
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.006 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -520 mA, -30 V, 0.63 ohm, -10 V, -1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.106 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
