产品分类：场效应管MOSFET晶体管(600V以下),
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 207 A, 30 V, 0.00095 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.00055 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 60 V, 0.0054 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 18 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 49 A, 100 V, 0.0168 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 5.1A, D-PAK
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00089 ohm, 10 V, 1.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
(EN)
