产品分类：场效应管MOSFET晶体管(600V以下),
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 18.5A, D2-PAK
(EN)VISHAY
场效应管, MOSFET, P沟道, 30V, 11.4A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.1 A, -80 V, 0.147 ohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 20 V, 0.0125 ohm, 4.5 V, 400 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 84 A, 80 V, 0.0074 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)
