产品分类：场效应管MOSFET晶体管(600V以下),
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 18 A, 60 V, 54 mohm, 5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 238mA, SC-75
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19.6 A, 30 V, 3.4 mohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 250 V, 220 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 60 V, 350 mohm, 5 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 72 A, 100 V, 0.0102 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V
(EN)
