NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
VISHAY
场效应管, MOSFET, P沟道
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 70 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0265OHM, 6.1A,
VISHAY
MOSFET, N CHANNEL, 30V, 14A, SOIC-8
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V