产品分类：场效应管MOSFET晶体管(600V以下),
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 44 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.7 A, 100 V, 120 mohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 14 A, -40 V, 0.036 ohm, 20 V, -1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 310mA SOT-23
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 150 V, 0.074 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)
