产品分类：场效应管MOSFET晶体管(600V以下),
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -20V, -350MA, SOT-416-3
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.062 ohm, -4.5 V, -1.01 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 40 V, 0.0036 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.2 A, -8 V, 0.02 ohm, -4.5 V, -400 mV
(EN)
