产品分类：场效应管MOSFET晶体管(600V以下),
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)
VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.98 ohm, 10 V, 1.405 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 25A, D-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
