产品分类：场效应管MOSFET晶体管(600V以下),
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 150 V, 0.09 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0024 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0034 ohm, 10 V, 1.8 V
(EN)
INTERNATIONAL RECTIFIER
功率场效应管, MOSFET, P沟道, HEXFET, -20V, -2.6A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.006 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P 通道, -30V, -8A, TSOP-6
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6 A, 500 V, 1.05 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0056 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 57 A, 30 V, 4.7 mohm, 11.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.006 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
(EN)
