产品分类：场效应管MOSFET晶体管(600V以下),
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 74A, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)
NXP
场效应管, P沟道, DMOS FET, -300V, -210mA, 3-SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
VISHAY
晶体管, MOSFET, HEXFET, P沟道, -18 A, -50 V, 0.093 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38 A, 250 V, 75 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 30V, 93A TO-263AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 104 A, 55 V, 8 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)
