产品分类：场效应管MOSFET晶体管(600V以下),
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 0.178 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 15.2A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.9 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 0.102 ohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 55V, 49A TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 209A, 直接FET, ME-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.2 A, -30 V, 0.09 ohm, -10 V, -1.15 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.3 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 80 V, 0.0044 ohm, 10 V, 3 V
(EN)
