产品分类：场效应管MOSFET晶体管(600V以下),
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 13A, D-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 195 A, 40 V, 1.75 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.5 A, 20 V, 0.036 ohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 340 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
