产品分类：场效应管MOSFET晶体管(600V以下),
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0042 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 120 V, 0.0126 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0014 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.009 ohm, 15 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 55A TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 44 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
