产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 P沟道,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -35V, -13A
(EN)VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 0.0136 ohm, -10 V, -1.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -530 mA, -150 V, 1 ohm, -10 V, -4.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0024 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V
(EN)INTERNATIONAL RECTIFIER
功率场效应管, MOSFET, P沟道, HEXFET, -20V, -2.6A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, P 通道, -30V, -8A, TSOP-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
(EN)
