产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220AB,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 64A TO-220AB
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 150 V, 70 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.21 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.042 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO220AB-3
(EN)INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 14A, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, TO-220, 18A, 200V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 41 mohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-220AB
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V
(EN)
