产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220AB,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.36 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 30 V, 2.8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 4.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 7 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 9 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.006 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)
